Issue 4, 2017
From the journal:

CrystEngComm

Self-consistent growth of single-crystalline ([2 with combining macron]01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal

Pengyu Song,ab   Zhengyuan Wu,a   Xiyang Shen,a   Junyong Kang,a   Zhilai Fang ORCID logo *ab  and  Tong-Yi Zhangc  

* Corresponding authors

a Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
E-mail: jykang@xmu.edu.cn, zhilaifang@hotmail.com

b Department of Light Sources & Illuminating Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China

c Shanghai Materials Genome Institute and Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai 200444, China
E-mail: mezhangt@ust.hk, zhangty@shu.edu.cn

Abstract

Single-crystalline ([2 with combining macron]01)β-Ga2O3 nanowires were grown by using a flexible GaN seed nanocrystal “self-organizing” around catalytic Pt droplets. The atomic structures of β-Ga2O3([2 with combining macron]01) epitaxy on GaN(0001) were investigated by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and cathodoluminescence (CL). The synthesized nanowires prepared by self-consistent growth are single crystals of pure β-Ga2O3 phase with ([2 with combining macron]01)-orientation and high crystalline quality and have intense ultraviolet–blue CL emission properties at room temperature.

Graphical abstract: Self-consistent growth of single-crystalline ( [[2 with combining macron]] 01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/C6CE02319C
Article type
Paper
Submitted
06 Nov 2016
Accepted
23 Dec 2016
First published
23 Dec 2016

CrystEngComm, 2017,19, 625-631

Permissions

Request permissions

Self-consistent growth of single-crystalline ([2 with combining macron]01)β-Ga2O3 nanowires using a flexible GaN seed nanocrystal

P. Song, Z. Wu, X. Shen, J. Kang, Z. Fang and T. Zhang, CrystEngComm, 2017, 19, 625 DOI: 10.1039/C6CE02319C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements