Issue 48, 2016

Progress in piezo-phototronic effect enhanced photodetectors

Abstract

Wurtzite structured materials such as InN, CaN, ZnO, and CdSe simultaneously possess piezoelectric, semiconducting, and photoexcitation properties. The piezo-phototronic effect utilizes the piezo-polarization charges induced in the vicinity of the interface/junction to regulate the energy band diagrams and modulate charge carriers in the optoelectronic processes, such as transport, generation, recombination, and separation. This article reviews recent progress in piezo-phototronic effect enhanced photodetectors, starting from the fundamental physics, following the development from a single nanowire device to a large-scale photodetector array for illumination imaging. The piezo-phototronic effect provides a promising approach to improve the performance of the wurtzite structured material-based photodetectors. It may have potential applications in optical communication, optoelectronic devices, and multifunctional computing systems.

Graphical abstract: Progress in piezo-phototronic effect enhanced photodetectors

Article information

Article type
Review Article
Submitted
15 Sep 2016
Accepted
07 Nov 2016
First published
08 Nov 2016
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2016,4, 11341-11354

Progress in piezo-phototronic effect enhanced photodetectors

X. Han, M. Chen, C. Pan and Z. L. Wang, J. Mater. Chem. C, 2016, 4, 11341 DOI: 10.1039/C6TC04029B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements