Issue 45, 2016

Clarifying the preferential occupation of Ga3+ ions in YAG:Ce,Ga nanocrystals with various Ga3+-doping concentrations by nuclear magnetic resonance spectroscopy

Abstract

As candidates for display and lighting optical materials, yttrium aluminum garnet nanophosphors co-doped with Ce3+ and Ga3+ ions (YAG:Ce,Ga) were successfully synthesized via a facile sol–gel method. We used multiple characterization techniques to study the local crystal structure of Ce3+ activators and examine the preferential position of Ga3+ ions in YAG:Ce,Ga nanophosphors. For the first time, solid-state nuclear magnetic resonance spectroscopy was used to confirm that Ga3+ ions preferentially replaced the octahedral Al3+ ions in a wide Ga3+ concentration range. The replacement caused the expansion of the lattice constant and decreased the local crystal field strength surrounding Ce3+ activators that located in the dodecahedral sites, which were beneficial to the luminescence emission of Ce3+ ions. The YAG:Ce,Ga nanophosphors with excellent photoluminescence properties were obtained by optimizing the calcination temperature (930 °C) and Ga3+-doping concentration (18 at%). The optimized nanophosphors displayed stronger luminescence emission with a desirable blue shift than classic YAG:Ce phosphors, and presented a short fluorescence lifetime of ∼24 ns and a long fluorescence lifetime of ∼85 ns.

Graphical abstract: Clarifying the preferential occupation of Ga3+ ions in YAG:Ce,Ga nanocrystals with various Ga3+-doping concentrations by nuclear magnetic resonance spectroscopy

Supplementary files

Article information

Article type
Paper
Submitted
03 Jul 2016
Accepted
17 Oct 2016
First published
18 Oct 2016

J. Mater. Chem. C, 2016,4, 10691-10700

Clarifying the preferential occupation of Ga3+ ions in YAG:Ce,Ga nanocrystals with various Ga3+-doping concentrations by nuclear magnetic resonance spectroscopy

X. He, X. Liu, C. You, Y. Zhang, R. Li and R. Yu, J. Mater. Chem. C, 2016, 4, 10691 DOI: 10.1039/C6TC02763F

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