Issue 31, 2016

Current emission from P-doped SiC nanowires with ultralow turn-on fields

Abstract

In the present work, we reported the current emission from P-doped SiC nanowire field emitters, which were synthesized via catalyst-assisted pyrolysis of polysilazane precursors. Directed by F–N theory for enhanced field emission (FE) behaviors, the emitters were grown into nanostructures with two desired characteristics, namely with an ultrahigh aspect ratio as well as incorporated P dopants, which brought profound enhancements to the field enhancement factor (β) and turn-on field (Eto). The as-grown SiC nanowires (SiCNWs) exhibit an aspect ratio over 1500 with a uniform spatial distribution of P dopants. The FE measurements exhibit that the SiCNWs possessed a field enhancement factor up to 11 657 and an ultralow Eto of 0.47 V μm−1, which was little achieved among the reported studies. The current emission fluctuations are ∼±4.0% over 5 h, suggesting their good electron emission stability. We mainly attributed the totally excellent FE performances to the ultra-high aspect ratio and the incorporated P dopants of the obtained SiCNWs, which could synergistically cause a significant increase of the field enhancement factor and a decrease of the work function.

Graphical abstract: Current emission from P-doped SiC nanowires with ultralow turn-on fields

Supplementary files

Article information

Article type
Communication
Submitted
04 May 2016
Accepted
14 Jul 2016
First published
19 Jul 2016

J. Mater. Chem. C, 2016,4, 7391-7396

Current emission from P-doped SiC nanowires with ultralow turn-on fields

S. Chen, M. Shang, Z. Yang, J. Zheng, L. Wang, Q. Liu, F. Gao and W. Yang, J. Mater. Chem. C, 2016, 4, 7391 DOI: 10.1039/C6TC01823H

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