Issue 20, 2016

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

Abstract

In this study, amorphous indium-tungsten oxide (IWO) semiconductor thin films were prepared by an eco-friendly spin-coating process using ethanol and water as solvents. The electrical properties of IWO thin-film transistors (TFTs), together with the structural and morphological characteristics of IWO thin films, were systematically investigated as functions of tungsten concentration and annealing temperature. The optimized IWO channel layer was then integrated on an aqueous aluminum oxide (AlOx) gate dielectric. It is observed that the solution-processed IWO/AlOx TFT presents high stability and improved characteristics, such as an on/off current ratio of 5 × 107, a field-effect mobility of 15.3 cm2 V−1 s−1, a small subthreshold slope of 68 mV dec−1, and a threshold voltage shift of 0.15 V under bias stress for 2 h. The IWO/AlOx TFT could be operated at a low voltage of 2 V, which was 15 times lower than that of conventional SiO2-based devices. The solution-processed IWO thin films synthesized in a green route would be promising candidates for large-area and high-performance low-cost devices.

Graphical abstract: Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

Supplementary files

Article information

Article type
Paper
Submitted
31 Jan 2016
Accepted
30 Mar 2016
First published
30 Mar 2016

J. Mater. Chem. C, 2016,4, 4478-4484

Author version available

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

A. Liu, G. Liu, H. Zhu, B. Shin, E. Fortunato, R. Martins and F. Shan, J. Mater. Chem. C, 2016, 4, 4478 DOI: 10.1039/C6TC00474A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements