Issue 7, 2016

One step synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

Abstract

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir–Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over 106), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

Graphical abstract: One step synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

Supplementary files

Article information

Article type
Paper
Submitted
08 Dec 2015
Accepted
22 Jan 2016
First published
22 Jan 2016

J. Mater. Chem. C, 2016,4, 1511-1516

One step synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

S. Cho, S. Jang, H. Jo, S. Lee, S. Bae, S. H. Lee, J. Hwang, H. Joh, G. Wang and T. Kim, J. Mater. Chem. C, 2016, 4, 1511 DOI: 10.1039/C5TC04166J

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