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Issue 10, 2016
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Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

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Abstract

The fabrication and characterization of a field effect transistor using a radial core/shell structure based on ZnTe nanowires is reported here. The electronic and photoconductive performance of the devices is successfully controlled by tuning the shell to core ratios in the integrated devices. The ZnO shell around the ZnTe nanowire has a significant effect on the optical properties of the transistor, and the photo-to-dark current ratio, responsivity and photoconductive gain are greatly enhanced to 199, 196 and 8.12 × 104% respectively for the 17.5% shell/core ratio. The ability to control the core/shell ratio presented here is promising in device design for optoelectronic applications for covering a wide range of wavelengths.

Graphical abstract: Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

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Publication details

The article was received on 27 Nov 2015, accepted on 08 Feb 2016 and first published on 08 Feb 2016


Article type: Paper
DOI: 10.1039/C5TC03999A
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Citation: J. Mater. Chem. C, 2016,4, 2040-2046
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    Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

    M. Shaygan, K. Davami, B. Jin, T. Gemming, J. Lee and M. Meyyappan, J. Mater. Chem. C, 2016, 4, 2040
    DOI: 10.1039/C5TC03999A

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