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Issue 4, 2016
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High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

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Abstract

The effects of sulfur passivation of the Ge substrate were studied through (NH4)2S solution treatment and the rapid thermal annealing under an H2S atmosphere prior to atomic-layer-deposition (ALD) of HfO2. While a chemically unstable and uneven sulfur layer was formed by (NH4)2S solution treatment, a stable, highly uniform and dense sulfur layer with a thickness of ∼2 nm was formed by H2S annealing on Ge substrates. The sulfur concentration at the interface increased with H2S annealing temperature. Sulfur passivation suppressed the diffusion of Ge into the HfO2 film and any interfacial layer growth during ALD, which resulted in a decreased equivalent oxide thickness of gate insulator. The interface properties, such as interface defect state density and hysteresis in capacitance–voltage behavior, were also improved by sulfur passivation through H2S annealing. H2S annealing is much more compatible with a mass-production process compared to the conventional (NH4)2S solution treatment process.

Graphical abstract: High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

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Publication details

The article was received on 10 Oct 2015, accepted on 14 Dec 2015 and first published on 15 Dec 2015


Article type: Paper
DOI: 10.1039/C5TC03267A
Citation: J. Mater. Chem. C, 2016,4, 850-856

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    High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

    T. J. Seok, Y. J. Cho, H. S. Jin, D. H. Kim, D. W. Kim, S. Lee, J. Park, J. Won, S. K. Kim, C. S. Hwang and T. J. Park, J. Mater. Chem. C, 2016, 4, 850
    DOI: 10.1039/C5TC03267A

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