An improved model for the surface potential and drain current in negative capacitance field effect transistors
An improved model for the surface potential and drain current in negative capacitance ferroelectric field effect transistors (NC-FeFETs) was presented by introducing the doping concentration. The influence of the doping concentration and temperature on the electric characteristics of NC-FeFET was investigated based on this model. The derived results demonstrated that the subthreshold slope of the metal–ferroelectric–semiconductor NC-FeFET increases, while the drive current decreases when the substrate doping concentration increases from 1017 m−3 to 1020 m−3. Additionally, in the temperature range from 290 K to 380 K, the voltage amplification gradually shrinks, resulting in the subthreshold swing increasing from 51 mV dec−1 to 71 mV dec−1. These results indicated that silicon doping concentration and temperature are two key factors for optimizing the operation voltage in NC-FeFETs.