Efficient perovskite light-emitting diodes by film annealing temperature control

Abstract

Perovskite light-emitting diodes (PeLEDs) have attracted much attention in the past two years due to their high photo-luminescence quantum efficiencies and wavelength tuneable characteristics. In this work, the effect of annealing temperature and time on the perovskite (CH₃NH₃PbBr₃) films and devices have been investigated in detail. The properties including photoluminescence, crystallinity and morphology of perovskite films together with device performance have been affected significantly by the annealing temperature and time. The PeLED with 80 °C annealing for 20 min shows the best device performance and exhibits a maximum luminance of 13 700 cd m⁻², and a maximum current efficiency of 8.22 cd A⁻¹. This work will provide useful information for the future optimization and development in high quality perovskite films and high performance PeLEDs.