Investigation of multilevel data memory using filament and polarization control

Abstract

Multi-state storage memory is a breakthrough for further improving the density in random access memory. However, the low switching ratio and high operating voltage limit the application of multibit-storage. Herein, we report a kind of four state memory with low operating voltage, in which the four states are caused by polarization switching and filament forming/rupture. In the switching of the four states, the electronic transport mechanisms of the device switch between thermionic injection and electron tunneling. Especially, the four states can be written/erased feasibly and distinguished clearly in the reading processes. It shows strong promise for the application of high storage density nonvolatile memory.