Carrier-tunable magnetism in two dimensional graphene-like C2N

Abstract

We explore the carrier doping effect on magnetic properties in two dimensional (2D) graphene-like C₂N (g-C₂N) by performing spin-polarized density functional theory calculations. 2D g-C₂N can be induced to ferromagnetism by hole doping with a quite low critical concentration of 5 × 10¹³ cm⁻². Upon increasing the hole density, both the magnetic moment and the magnetic coupling can be enhanced. The predicted magnetism originates from the flat bands from the non-bonding σ-states localized at the nitrogen atoms. Our findings open an opportunity to explore magnetic phenomena in 2D, and to control spin transport in 2D semiconductors by electrostatic gating.