Insulator-quantum Hall transition in monolayer epitaxial graphene

Abstract

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρ_xx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σ_xx and σ_xy, in the most disordered device, we observed a T-driven flow diagram approximated by the semi-circle law as well as the T-independent point in σ_xy near e²/h. We discuss our experimental results in the context of the evolution of the zero-energy Landau level at low magnetic fields B. We also compare the observed strongly insulating behaviour with metallic behaviour and the absence of the I-QH transition in graphene on SiO₂ prepared by mechanical exfoliation.