Preparation of Sn-doped CuAlS2 films with an intermediate band and wide-spectrum solar response

Chenguang Guo; Chongyin Yang; Yian Xie; Ping Chen; Mingsheng Qin; Rongtie Huang; Fuqiang Huang

doi:10.1039/C6RA00946H

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Preparation of Sn-doped CuAlS₂ films with an intermediate band and wide-spectrum solar response†

Chenguang Guo,^a Chongyin Yang,^a Yian Xie,^a Ping Chen,^a Mingsheng Qin,^a Rongtie Huang^c and Fuqiang Huang*^ab

Author affiliations

* Corresponding authors

^a CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China
E-mail: huangfq@mail.sic.ac.cn

^b State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

^c Department of Physics, Shanghai University, Shanghai 200444, P. R. China

Abstract

As a member of Cu-containing chalcopyrites, CuAlS₂ is a promising candidate material for intermediate band solar cells (IBSCs). In this paper, the intermediate band mechanism of Sn doped CuAlS₂ was investigated both theoretically and experimentally, and the two sub-bandgaps were measured to be 1.91 eV and 1.31 eV, respectively. A novel and convenient method of Electrophoretic Deposition (EPD) was utilized to prepare Sn doped CuAlS₂ films. Due to the wide-spectrum of absorption introduced by the intermediate band, Sn doped CuAlS₂ films showed better photoelectrochemical performance (PEC).

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Article information

DOI: https://doi.org/10.1039/C6RA00946H
Article type: Paper
Submitted: 12 Jan 2016
Accepted: 08 Apr 2016
First published: 19 Apr 2016

Download Citation

RSC Adv., 2016,6, 40806-40810

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Preparation of Sn-doped CuAlS₂ films with an intermediate band and wide-spectrum solar response

C. Guo, C. Yang, Y. Xie, P. Chen, M. Qin, R. Huang and F. Huang, RSC Adv., 2016, 6, 40806 DOI: 10.1039/C6RA00946H

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