Issue 10, 2016

Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

Abstract

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated. The Seebeck coefficients, electrical resistivities, and thermal conductivities of the Si-doped and undoped InAs nanowires were measured using a micro-fabricated thermoelectric measurement platform over the temperature range of 50 to 300 K. The Si-doping increased electrical conductivity from 1.0 × 10−4 to 7.8 × 10−4 S m−1, due to the increase in carrier concentration from 2 × 1017 to 8 × 1017 cm−3, and then decreased the thermopower from −216 to −81 μV K−1 at 300 K, in agreement with the two-band model based on the Boltzman transport theory. Phonon scattering, caused by planar defects such as surfaces, twins, and stacking-fault boundaries, suppressed the lattice thermal conductivity below 3 W m−1 K−1 following the Callaway model. The planar defect-induced phonon scattering as well as the optimization of carrier concentration is very effective at enhancing the thermoelectric properties of InAs nanowires and is expected to be utilized for improving the thermoelectric properties of other thermoelectric materials.

Graphical abstract: Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

Supplementary files

Article information

Article type
Paper
Submitted
11 Dec 2015
Accepted
10 Jan 2016
First published
19 Jan 2016

RSC Adv., 2016,6, 7791-7797

Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

S. G. Jeon, D. W. Park, H. S. Shin, H. M. Park, S. Y. Choi, S. J. Lee, J. Yu and J. Y. Song, RSC Adv., 2016, 6, 7791 DOI: 10.1039/C5RA26441C

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