Jump to main content
Jump to site search

Issue 39, 2016
Previous Article Next Article

High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

Author affiliations

Abstract

As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V−1 s−1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

Graphical abstract: High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

Back to tab navigation

Supplementary files

Publication details

The article was received on 14 Jul 2016, accepted on 11 Sep 2016 and first published on 12 Sep 2016


Article type: Communication
DOI: 10.1039/C6NR05577J
Citation: Nanoscale, 2016,8, 17113-17121
  •   Request permissions

    High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance

    S.-Y. Kim, K. Kim, Y. H. Hwang, J. Park, J. Jang, Y. Nam, Y. Kang, M. Kim, H. J. Park, Z. Lee, J. Choi, Y. Kim, S. Jeong, B.-S. Bae and J.-U. Park, Nanoscale, 2016, 8, 17113
    DOI: 10.1039/C6NR05577J

Search articles by author

Spotlight

Advertisements