Issue 47, 2016

Boron distributions in individual core–shell Ge/Si and Si/Ge heterostructured nanowires

Abstract

Ge/Si and Si/Ge core–shell nanowires (NWs) have substantial potential for application in many kinds of devices. Because impurity distributions in Ge/Si and Si/Ge core–shell NWs strongly affect their electrical properties, which in turn affect device performance, this issue needs urgent attention. Here we report an atom probe tomographic study of the distribution of boron (B), one of the most important impurities, in two kinds of NWs. B atoms were doped into the Si regions of Ge/Si and Si/Ge core–shell NWs. It was found that the B atoms were randomly distributed in the Si shell of the Ge/Si core–shell NWs. In the Si/Ge core–shell NWs, on the other hand, the B distributions depended on the growth temperature and the B2H6 flux. With a higher growth temperature and an increased B2H6 flux, the B atoms piled up in the outer region of the Si core. However, the B atoms were observed to be randomly distributed in the Si core after decreasing both the growth temperature and the B2H6 flux.

Graphical abstract: Boron distributions in individual core–shell Ge/Si and Si/Ge heterostructured nanowires

Supplementary files

Article information

Article type
Paper
Submitted
31 May 2016
Accepted
01 Nov 2016
First published
02 Nov 2016
This article is Open Access
Creative Commons BY license

Nanoscale, 2016,8, 19811-19815

Boron distributions in individual core–shell Ge/Si and Si/Ge heterostructured nanowires

B. Han, Y. Shimizu, J. Wipakorn, K. Nishibe, Y. Tu, K. Inoue, N. Fukata and Y. Nagai, Nanoscale, 2016, 8, 19811 DOI: 10.1039/C6NR04384D

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements