Issue 18, 2016
From the journal:

Nanoscale

Synthesis of nonepitaxial multilayer silicene assisted by ion implantation†

Hsu-Sheng Tsai,*a   Ching-Hung Hsiao,b   Chia-Wei Chen,b   Hao Ouyangb  and  Jenq-Horng Liang*ac  

* Corresponding authors

a Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China
E-mail: b91520016@yahoo.com.tw, jhliang@ess.nthu.edu.tw

b Department of Material Science and Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China

c Department of Engineering and System Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan, Republic of China

Abstract

Nonepitaxial multilayer silicene with a lonsdaleite structure was synthesized from a 4H-SiC substrate using an implantation-assisted process. An sp3-like bonding signal was fitted in a lonsdaleite Si XPS spectrum. The multilayer silicene was directly observed and the derived interplanar distances were found to be nearly consistent with the theoretical values.

Graphical abstract: Synthesis of nonepitaxial multilayer silicene assisted by ion implantation

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Article information

DOI
https://doi.org/10.1039/C6NR02274J
Article type
Communication
Submitted
18 Mar 2016
Accepted
09 Apr 2016
First published
11 Apr 2016

Nanoscale, 2016,8, 9488-9492

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Synthesis of nonepitaxial multilayer silicene assisted by ion implantation

H. Tsai, C. Hsiao, C. Chen, H. Ouyang and J. Liang, Nanoscale, 2016, 8, 9488 DOI: 10.1039/C6NR02274J

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