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Issue 16, 2016
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The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

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Abstract

We demonstrate that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions. Despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride. By means of transport experiments, density functional theory and vibrational spectroscopy, we attribute the p-type doping assumed by uncapped InSe under an ambient atmosphere to the decomposition of water at Se vacancies. We have estimated the site-dependent adsorption energy of O2, N2, H2O, CO and CO2 on InSe. A stable adsorption is found only for the case of H2O, with a charge transfer of only 0.01 electrons per water molecule.

Graphical abstract: The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

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Publication details

The article was received on 13 Feb 2016, accepted on 18 Mar 2016 and first published on 21 Mar 2016


Article type: Communication
DOI: 10.1039/C6NR01262K
Nanoscale, 2016,8, 8474-8479

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    The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices

    A. Politano, G. Chiarello, R. Samnakay, G. Liu, B. Gürbulak, S. Duman, A. A. Balandin and D. W. Boukhvalov, Nanoscale, 2016, 8, 8474
    DOI: 10.1039/C6NR01262K

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