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Issue 16, 2016
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Sinusoidal nanotextures for light management in silicon thin-film solar cells

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Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass–silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Graphical abstract: Sinusoidal nanotextures for light management in silicon thin-film solar cells

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Article information

15 Dec 2015
27 Mar 2016
First published
29 Mar 2016

Nanoscale, 2016,8, 8722-8728
Article type
Author version available

Sinusoidal nanotextures for light management in silicon thin-film solar cells

G. Köppel, B. Rech and C. Becker, Nanoscale, 2016, 8, 8722
DOI: 10.1039/C5NR08917D

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