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Issue 10, 2016

Coherence times of precise depth controlled NV centers in diamond

Author affiliations

Abstract

We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precise depth control using oxidative etching at 580 °C in air. By successive nanoscale etching, NV centers could be brought close to the diamond surface step by step, which enabled us to track the evolution of the number of NV centers remaining in the chip and to study the depth dependence of coherence times of NV centers with diamond etching. Our results showed that the coherence times of NV centers declined rapidly with the depth reduction in the last about 22 nm before they finally disappeared, which revealed a critical depth for the influence of a rapid fluctuating surface spin bath. Moreover, by using the slow etching method combined with low-energy nitrogen implantation, NV centers with depths shallower than the initially implanted depths can be generated, which are preferred for detecting external spins with higher sensitivity.

Graphical abstract: Coherence times of precise depth controlled NV centers in diamond

Article information


Submitted
07 Dec 2015
Accepted
01 Feb 2016
First published
08 Feb 2016

Nanoscale, 2016,8, 5780-5785
Article type
Paper

Coherence times of precise depth controlled NV centers in diamond

J. Wang, W. Zhang, J. Zhang, J. You, Y. Li, G. Guo, F. Feng, X. Song, L. Lou, W. Zhu and G. Wang, Nanoscale, 2016, 8, 5780 DOI: 10.1039/C5NR08690F

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