Issue 11, 2016

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

Abstract

InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal–organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

Graphical abstract: Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

Article information

Article type
Paper
Submitted
11 Nov 2015
Accepted
01 Feb 2016
First published
01 Feb 2016

Nanoscale, 2016,8, 6043-6056

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

H. Dong, J. Sun, S. Ma, J. Liang, T. Lu, X. Liu and B. Xu, Nanoscale, 2016, 8, 6043 DOI: 10.1039/C5NR07938A

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