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Issue 5, 2016
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Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)

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The ability to synthesize well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in situ can greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented α-MoO3 films with as low as single monolayer thickness can be reproducibly grown on SrTiO3(001) substrates by molecular beam epitaxy ((010)MoO3‖(001)STO, [100]MoO3‖[100]STO or [010]STO) through a self-limiting process. While one in-plane lattice parameter of the MoO3 is very close to that of the SrTiO3 (aMoO3 = 3.96 Å, aSTO = 3.905 Å), the lattice mismatch along other direction is large (∼5%, cMoO3 = 3.70 Å), which leads to relaxation as clearly observed from the splitting of streaks in reflection high-energy electron diffraction (RHEED) patterns. A narrow range in the growth temperature is found to be optimal for the growth of monolayer α-MoO3 films. Increasing deposition time will not lead to further increase in thickness, which is explained by a balance between deposition and thermal desorption due to the weak van der Waals force between α-MoO3 layers. Lowering growth temperature after the initial iso-oriented α-MoO3 monolayer leads to thicker α-MoO3(010) films with excellent crystallinity.

Graphical abstract: Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)

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Supplementary files

Article information

05 Nov 2015
08 Jan 2016
First published
20 Jan 2016

Nanoscale, 2016,8, 3119-3124
Article type
Author version available

Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)

Y. Du, G. Li, E. W. Peterson, J. Zhou, X. Zhang, R. Mu, Z. Dohnálek, M. Bowden, I. Lyubinetsky and S. A. Chambers, Nanoscale, 2016, 8, 3119
DOI: 10.1039/C5NR07745A

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