Issue 8, 2016

Thioether functionalised gallium and indium alkoxides in materials synthesis

Abstract

The thermolysis behaviour of a new class of metal alkoxides containing a thioether functionality in the alkyl chain is described. Homoleptic gallium alkoxides with sufficient volatility have been investigated in low pressure chemical vapour deposition (CVD) showing the potency of the thioether to act as a sulphidisation agent during decomposition of the precursor leading to Ga2O3−xSx films. Similar thermolysis experiments were conducted in high boiling point solvents leading to Ga2O3−xSx and In2O3−xSx particles. The thermolysis products have been investigated by SEM, EDX, XRD and XPS. Moreover, initial tests of the electrical transport properties of amorphous Ga2O3−xSx films have been conducted, showing increased conductivity and altered activation energies for the sulphur containing films.

Graphical abstract: Thioether functionalised gallium and indium alkoxides in materials synthesis

Supplementary files

Article information

Article type
Paper
Submitted
05 Feb 2016
Accepted
14 Jun 2016
First published
15 Jun 2016
This article is Open Access
Creative Commons BY license

New J. Chem., 2016,40, 6962-6969

Thioether functionalised gallium and indium alkoxides in materials synthesis

F. Biegger, C. Rameshan, A. K. Opitz, J. Noll, T. Haunold, H. Lang and S. Barth, New J. Chem., 2016, 40, 6962 DOI: 10.1039/C6NJ00402D

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