Issue 7, 2016
From the journal:

Physical Chemistry Chemical Physics

Correction: Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

Shouzhi Xi,ab   Wanqi Jie,*ab   Gangqiang Zha,*ab   Yanyan Yuan,a   Tao Wang,ab   Wenhua Zhang,c   Junfa Zhu,c   Lingyan Xu,ab   Yadong Xu,ab   Jie Su,a   Hao Zhang,ab   Yaxu Gu,ab   Jiawei Li,a   Jie Renab  and  Qinghua Zhaoab  

* Corresponding authors

a State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, P. R. China
E-mail: jwq@nwpu.edu.cn, zha_gq@nwpu.edu.cn

b Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, China

c National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China

Abstract

Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.

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Article information

DOI
https://doi.org/10.1039/C6CP90030E
Article type
Correction
Submitted
22 Jan 2016
Accepted
22 Jan 2016
First published
27 Jan 2016
This article is Open Access
Creative Commons BY license

Phys. Chem. Chem. Phys., 2016,18, 5658-5658

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Correction: Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

S. Xi, W. Jie, G. Zha, Y. Yuan, T. Wang, W. Zhang, J. Zhu, L. Xu, Y. Xu, J. Su, H. Zhang, Y. Gu, J. Li, J. Ren and Q. Zhao, Phys. Chem. Chem. Phys., 2016, 18, 5658 DOI: 10.1039/C6CP90030E

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