Two-dimensional stanane: strain-tunable electronic structure, high carrier mobility, and pronounced light absorption

Abstract

By means of state-of-the-art density functional theory (DFT) computations, we systematically studied the structural, electronic, and optical properties of a novel two dimensional material, namely stanane (SnH). According to our computational results, stanane is semiconducting with a direct band gap of 1.00 eV, which can be flexibly tuned by applying an external strain. Remarkably, stanane has much higher electron and hole mobilities than those of a MoS₂ monolayer at room temperature. Moreover, stanane has rather strong optical absorption in the visible as well as infrared regions of the solar spectrum. These results provide many useful insights for the wide application of stanane in electronics and optoelectronics.