Control of crystal growth and thermoelectric properties of sputter-deposited BiTe thin films embedded with alumina nanoparticles

Abstract

BiTe thin films embedded with alumina nanoparticles were prepared by co-sputtering Al and Bi₂Te₃ targets at 300 °C. The Al content in the films was determined by varying the applied power of the Al target. Al transformed into alumina by oxygen contamination during deposition, and alumina nanoparticles uniformly dispersed in the films. This facilitated the control of crystal growth of BiTe. The thermoelectric properties of BiTe thin films embedded with alumina nanoparticles were enhanced compared with those of pure BiTe thin films.