Synthesis and luminescent properties of ternary Si–Ge–N nanowires

Abstract

Herein, we report the successful synthesis of silicon germanium nitride (Si_1−xGe_x)₃N₄ nanowires with controllable Si : Ge ratios by nitriding cryomilled Si–Ge alloys at different sintering temperatures. The nanowires with different Si : Ge ratios show obvious differences in their diameters and band structures. The diameters are about 130 nm and 70 nm for the (Si_0.16Ge_0.84)₃N₄ and (Si_0.94Ge_0.06)₃N₄ nanowires, respectively. The band gap is 2.3 eV for (Si_0.16Ge_0.84)₃N₄ and 3.4 eV for (Si_0.94Ge_0.06)₃N₄. Both PL and CL spectra show a strong green emission peak for the (Si_0.16Ge_0.84)₃N₄ nanowire, whereas violet and orange peaks for (Si_0.16Ge_0.84)₃N₄. This study will be useful not only for the synthesis of different polymorphs of nanostructures, but also for the development of new generation nitrides emitting materials with tunable luminous properties.