Low-temperature synthesis and electronic transport of topological insulator SmB6 nanowires

Abstract

We report a novel solid state method to prepare samarium hexaboride (SmB₆) nanowires at low temperatures of 220–240 °C. Scanning electron microscopy (SEM) images show that the SmB₆ nanowires have diameters from 50 to 120 nm and lengths from 1 to 8 μm. Transmission electron microscopy (TEM) images reveal that the SmB₆ nanowires are single crystalline with a preferred [001] growth direction. Electronic transport shows that a SmB₆ nanowire has a high saturation temperature of 6 K and an enhanced surface conduction.