Issue 27, 2016
From the journal:

CrystEngComm

Vanadoantimonates: from discrete clusters to high dimensional aggregates†

Hai-Yang Guo,a   Xiao Zhang,*bc   Xiao-Bing Cui,*a   Qi-Sheng Huoa  and  Ji-Qing Xua  

* Corresponding authors

a College of Chemistry and State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun, Jilin, China
E-mail: cuixb@mail.jlu.edu.cn

b MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, PR China

c Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin, People's Republic of China

Abstract

Five new vanadoantimonates [Cd(en)3]3[Sb6V15O42(H2O)]·8H2O (1), [Ni(en)3]2[H2Sb6V15O42(H2O)]·5H2O (2), [Co(en)3]2[H2Sb6V15O42(H2O)]·5H2O (3), [H4Sb8V14O42(H2O)]·5H2O (4) and [Co(enMe)3]2[Sb8V14O42(H2O)]·4H2O (5) (en = ethylenediamine, enMe = 1,2-propanediamine) have been obtained under hydrothermal conditions and characterized by IR, UV-Vis, XRD, ESR and CD spectroscopy. Compound 1 is a chiral compound constructed from [Sb6V15O42(H2O)]6− (Sb6V15) and [Cd(en)3]2+. Compounds 2 and 3 are isostructural and isomorphous. Both compounds are chiral, each of which contains a 2-D inorganic layer formed by [H2Sb6V15O42(H2O)]4−via V–O⋯Sb contacts. Compound 4 contains a 2-D inorganic layer formed by [H4Sb8V14O42(H2O)], of which [H4Sb8V14O42(H2O)] is directed by both V–O⋯Sb and Sb–O⋯Sb interactions. Compound 5 contains a 1-D zigzag chain structure formed by [Sb8V14O42(H2O)]4− (Sb8V14) via Sb–O⋯Sb contacts.

Graphical abstract: Vanadoantimonates: from discrete clusters to high dimensional aggregates

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Article information

DOI
https://doi.org/10.1039/C6CE00616G
Article type
Paper
Submitted
18 Mar 2016
Accepted
13 May 2016
First published
13 May 2016

CrystEngComm, 2016,18, 5130-5139

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Vanadoantimonates: from discrete clusters to high dimensional aggregates

H. Guo, X. Zhang, X. Cui, Q. Huo and J. Xu, CrystEngComm, 2016, 18, 5130 DOI: 10.1039/C6CE00616G

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