Issue 43, 2016
From the journal:

Chemical Communications

Correction: Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

Sujoy Sarkara  and  S. Sampath*a  

* Corresponding authors

a Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore-560012, India
E-mail: sampath@ipc.iisc.ernet.in
Fax: +91-80-2360-0085
Tel: +91-80 2293 3315

Abstract

Correction for ‘Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control’ by Sujoy Sarkar et al., Chem. Commun., 2016, 52, 6407–6410.

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Article information

DOI
https://doi.org/10.1039/C6CC90214F
Article type
Correction
Submitted
03 May 2016
Accepted
03 May 2016
First published
10 May 2016
This article is Open Access
Creative Commons BY license

Chem. Commun., 2016,52, 7051-7051

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Correction: Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

S. Sarkar and S. Sampath, Chem. Commun., 2016, 52, 7051 DOI: 10.1039/C6CC90214F

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