Issue 45, 2016
From the journal:

Chemical Communications

Non-volatile transistor memory devices using charge storage cross-linked core–shell nanoparticles†

Chen-Tsyr Lo,a   Yu Watanabe,b   Hiroshi Oya,b   Kazuhiro Nakabayashi,b   Hideharu Mori*b  and  Wen-Chang Chen*a  

* Corresponding authors

a Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan
E-mail: chenwc@ntu.edu.tw

b Department of Polymer Science and Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa, Japan
E-mail: h.mori@yz.yamagata-u.ac.jp

Abstract

Solution processable cross-linked core–shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.

Graphical abstract: Non-volatile transistor memory devices using charge storage cross-linked core–shell nanoparticles

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Article information

DOI
https://doi.org/10.1039/C6CC02750D
Article type
Communication
Submitted
01 Apr 2016
Accepted
09 May 2016
First published
09 May 2016

Chem. Commun., 2016,52, 7269-7272

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Non-volatile transistor memory devices using charge storage cross-linked core–shell nanoparticles

C. Lo, Y. Watanabe, H. Oya, K. Nakabayashi, H. Mori and W. Chen, Chem. Commun., 2016, 52, 7269 DOI: 10.1039/C6CC02750D

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