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Issue 28, 2015
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Transistors fabricated using the single crystals of [8]phenacene

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Abstract

Field-effect transistors (FETs) with single crystals of a new phenacene-type molecule, [8]phenacene, were fabricated and characterized. This new molecule consists of a phenacene core of eight benzene rings, with an extended π-conjugated system, which was recently synthesized for use in an FET by our group. The FET characteristics of an [8]phenacene single-crystal FET with SiO2 gate dielectrics show typical p-channel properties with an average field-effect mobility, 〈μ〉, as high as 3(2) cm2 V−1 s−1 in two-terminal measurement mode, which is a relatively high value for a p-channel single-crystal FET. The 〈μ〉 was determined to be 6(2) cm2 V−1 s−1 in four-terminal measurement mode. Low-voltage operation was achieved with PbZr0.52Ti0.48O3 (PZT) as the gate dielectric, and an electric-double-layer (EDL) capacitor. The 〈μ〉 and average values of absolute threshold voltage, 〈|Vth|〉, were 1.6(4) cm2 V−1 s−1 and 5(1) V, respectively, for PZT, and 4(2) × 10−1 cm2 V−1 s−1 and 2.38(4) V, respectively, for the EDL capacitor; these values were evaluated in two-terminal measurement mode. The inverter circuit was fabricated using [8]phenacene and N,N′-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide single-crystal FETs. This is the first logic gate circuit using phenacene molecules. Furthermore, the relationship between μ and the number of benzene rings was clarified based on this study and the previous studies on phenacene single-crystal FETs.

Graphical abstract: Transistors fabricated using the single crystals of [8]phenacene

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Supplementary files

Article information


Submitted
06 Apr 2015
Accepted
15 Jun 2015
First published
24 Jun 2015

J. Mater. Chem. C, 2015,3, 7370-7378
Article type
Paper
Author version available

Transistors fabricated using the single crystals of [8]phenacene

Y. Shimo, T. Mikami, H. T. Murakami, S. Hamao, H. Goto, H. Okamoto, S. Gohda, K. Sato, A. Cassinese, Y. Hayashi and Y. Kubozono, J. Mater. Chem. C, 2015, 3, 7370
DOI: 10.1039/C5TC00960J

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