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Issue 10, 2015
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Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes

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Abstract

Field-effect transistors (FETs) have been fabricated with thin films of a series of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophene derivatives (Cn-PDTs). The FET characteristics of Cn-PDT thin-film FETs with an SiO2 gate dielectric as well as high-k gate dielectrics were recorded, and the dependence of the field-effect mobility, μ, on the number (n) of carbon atoms in the alkyl chains was investigated, showing that the 2,9-didodecylphenanthro[1,2-b:8,7-b′]dithiophene (C12-PDT) thin-film FET displays superior properties, with μs as high as 1.8 cm2 V−1 s−1 for the SiO2 gate dielectric and 2.2 cm2 V−1 s−1 for the HfO2 gate dielectric. The average μ values, 〈μ〉, reach 1.1(5) and 1.8(6) cm2 V−1 s−1, respectively, for the SiO2 and ZrO2 gate dielectrics. Low-voltage operation, showing an absolute average threshold voltage 〈|Vth|〉 of ∼11 V, was implemented, together with the above high 〈μ〉 of ∼2 cm2 V−1 s−1. Also, a flexible FET was fabricated with a parylene gate dielectric. The results of this study show the potential of the C12-PDT molecule for application in a high-performance transistor.

Graphical abstract: Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes

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Article information


Submitted
23 Oct 2014
Accepted
16 Jan 2015
First published
19 Jan 2015

J. Mater. Chem. C, 2015,3, 2413-2421
Article type
Paper
Author version available

Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes

Y. Kubozono, K. Hyodo, H. Mori, S. Hamao, H. Goto and Y. Nishihara, J. Mater. Chem. C, 2015, 3, 2413
DOI: 10.1039/C4TC02413C

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