Flexible organic transistors based on a solution-sheared PVDF insulator

Abstract

Organic field-effect transistors are demonstrated in which the insulator–semiconductor stack of the poly(vinylidene fluoride) (PVDF) and polystyrene (PS):dibenzo-tetrathiavulfalene (DB-TTF) blend is deposited by two low-cost and scalable solution shearing steps onto plastic substrates. The PS vertically phase separates upon coating the DB-TTF:PS blend solution and acts as a smoothening and depolarisation layer for the underlying PVDF. The transistors exhibit a mean mobility of 0.2 cm² V⁻¹ s⁻¹, an on/off ratio of 10⁴ and near-zero threshold voltage with high reproducibility, the same performance as on previously reported Si/SiO₂ substrates.