High rate fabrication of room temperature red photoluminescent SiC nanocrystals

Abstract

A high rate fabrication of a thin film complex consisting of cubic-SiC nanocrystals, amorphous silicon and graphite was realized using an atmospheric pressure thermal plasma enhanced chemical vapor deposition (APTPECVD) process with SiCl₄ and C₂H₂ as the silicon source and carbon source, respectively. The morphology, crystal structure and surface chemical composition of the products were characterized. The APTPECVD SiC nanocrystals have average diameters between 18 and 30 nm. A room temperature red region photoluminescence (PL) property originated from the quantum confinement effect of these SiC nanocrystals was observed under UV wavelength excitation. Moreover, pure SiC nanocrystals with a red region PL property can be obtained after a simple post-treatment, including calcining and etching processes. These red photoluminescent SiC nanocrystals can be utilized as biomarkers in bioimaging and drug delivery.