Visible light detectors based on individual ZrSe3 and HfSe3 nanobelts

Abstract

Zinc triselenide (ZrSe₃) and hafnium triselenide (HfSe₃) nanobelts were synthesized using a chemical vapor transport method. Photodetectors based on individual nanobelts of ZrSe₃ and HfSe₃ were fabricated on SiO₂/Si substrates, respectively, and the optoelectronic properties of both were evaluated. The ZrSe₃ nanobelt photodetector showed a good photoresponse to wavelengths ranging from 405 nm to 780 nm. Under illumination with 650 nm light, the ratio of photoswitch currents reached 1.97 with a light on/off period of 50 s at a bias voltage of 5 V. The HfSe₃ nanobelt photodetector also showed good photoresponse to wavelengths ranging from 405 nm to 650 nm, and the ratio of photoswitch currents, under illumination with 532 nm light, reached 2.2 with a light on/off period of 50 s at a bias voltage of 5 V. The photoresponse time of both the photodetectors was less than 0.4 s. The results demonstrated that ZrSe₃ and HfSe₃ nanobelts possessed excellent photoconductivity, and suggested that these photodetectors would have potential applications under a range of visible light conditions.