Phosphorescence switch and logic gate of iridium(III) complexes containing a triarylboron moiety triggered by fluoride and an electric field

Wenpeng Lin; Qi Tan; Hua Liang; Kenneth Yin Zhang; Shujuan Liu; Rui Jiang; Rongrong Hu; Wenjuan Xu; Qiang Zhao; Wei Huang

doi:10.1039/C4TC02457E

Phosphorescence switch and logic gate of iridium(iii) complexes containing a triarylboron moiety triggered by fluoride and an electric field†

Wenpeng Lin,‡^a Qi Tan,‡^a Hua Liang,^a Kenneth Yin Zhang,^a Shujuan Liu,^a Rui Jiang,^a Rongrong Hu,^a Wenjuan Xu,^a Qiang Zhao*^a and Wei Huang*^ab

Author affiliations

* Corresponding authors

^a Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, P. R. China
E-mail: iamqzhao@njupt.edu.cn

^b Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, P. R. China
E-mail: wei-huang@njtech.edu.cn

Abstract

A new concept of phosphorescence switch and logic gate has been proposed based on iridium(III) complexes containing triarylboron moieties. The phosphorescence of the complexes can be quenched by F⁻ through the formation of B–F bonds. Interestingly, the B–F bonds can be ruptured under an electric field, restoring the phosphorescence.

Journal of Materials Chemistry C

Phosphorescence switch and logic gate of iridium(iii) complexes containing a triarylboron moiety triggered by fluoride and an electric field†

Abstract

Supplementary files

Article information

Download Citation

Permissions

Phosphorescence switch and logic gate of iridium(III) complexes containing a triarylboron moiety triggered by fluoride and an electric field

Social activity

Search articles by author

Spotlight

Advertisements