Issue 22, 2015

Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

Abstract

The thermoelectric properties of Gd-doped β-Zn4Sb3 are investigated. The results indicate that Gd-doping not only causes a 41 μV K−1 increase in thermopower owing to resonant distortion of DOS but also results in ∼15% reduction in thermal conductivity at a doping content of 0.2%. Consequently, a largest value of ZT = 1.2 is achieved at 655 K.

Graphical abstract: Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

Supplementary files

Article information

Article type
Communication
Submitted
10 Mar 2015
Accepted
25 Apr 2015
First published
30 Apr 2015

J. Mater. Chem. A, 2015,3, 11768-11772

Author version available

Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

B. Ren, M. Liu, X. Li, X. Qin, D. Li, T. Zou, G. Sun, Y. Li, H. Xin and J. Zhang, J. Mater. Chem. A, 2015, 3, 11768 DOI: 10.1039/C5TA01778E

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