Correction: Plasma enhanced atomic layer deposition of Ga2O3 thin films
Abstract
Correction for ‘Plasma enhanced atomic layer deposition of Ga2O3 thin films’ by Ranjith K. Ramachandran et al., J. Mater. Chem. A, 2014, 2, 19232–19238.
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* Corresponding authors
a
Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
E-mail:
Christophe.detavernier@ugent.be
Fax: +32-9-264-4996
Tel: +32-9-264-4354
b Department of Solid State Sciences, LumiLab, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
c Centre for Surface Chemistry and Catalysis, Catholic University of Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium
d Laboratory for Chemical Technology, Ghent University, Technologiepark 914, B-9052 Zwijnaarde, Belgium
Correction for ‘Plasma enhanced atomic layer deposition of Ga2O3 thin films’ by Ranjith K. Ramachandran et al., J. Mater. Chem. A, 2014, 2, 19232–19238.
R. K. Ramachandran, J. Dendooven, J. Botterman, S. P. Sree, D. Poelman, J. A. Martens, H. Poelman and C. Detavernier, J. Mater. Chem. A, 2015, 3, 916 DOI: 10.1039/C4TA90219J
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