Issue 124, 2015
From the journal:

RSC Advances

Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric†

Hyungjin Park,‡a   Yunyong Nam,‡a   Jungho Jinb  and  Byeong-Soo Bae*a  

* Corresponding authors

a Laboratory of Optical Materials and Coating (LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
E-mail: bsbae@kaist.ac.kr

b Multiscale Hybrid Materials Laboratory (MHML), School of Materials Science and Engineering, University of Ulsan, 93 Daehak-ro, Nam-gu, Ulsan 680-749, Korea

Abstract

The incorporation of ethylene glycol (EG) into a high-k aluminium oxide gate dielectric layer was achieved by a solution process, leading to a distinct increase in the mobility of indium oxide TFT. Frequency-dependent capacitance originating from residual EG was examined and the accompanying effects on indium oxide TFT were studied.

Graphical abstract: Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

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Article information

DOI
https://doi.org/10.1039/C5RA21022D
Article type
Communication
Submitted
10 Oct 2015
Accepted
23 Nov 2015
First published
24 Nov 2015

RSC Adv., 2015,5, 102362-102366

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Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

H. Park, Y. Nam, J. Jin and B. Bae, RSC Adv., 2015, 5, 102362 DOI: 10.1039/C5RA21022D

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