Issue 86, 2015

Naphtho[1,2b;5,6b′]difuran-based donor–acceptor polymers for high performance organic field-effect transistors

Abstract

Two naphthodifuran-based donor–acceptor copolymers are presented. Via reasonable main-chain modification and side-chain engineering, remarkably dense π–π stacking spacings (<3.5 Å) as well as high “edge-on” orientations are observed. When fabricated as organic field-effect transistors, high hole mobilities exceeding 5 cm2 V−1 s−1 are achieved at a moderate annealing temperature of 120 °C.

Graphical abstract: Naphtho[1,2b;5,6b′]difuran-based donor–acceptor polymers for high performance organic field-effect transistors

Supplementary files

Article information

Article type
Communication
Submitted
24 Jul 2015
Accepted
12 Aug 2015
First published
12 Aug 2015

RSC Adv., 2015,5, 70319-70322

Author version available

Naphtho[1,2b;5,6b′]difuran-based donor–acceptor polymers for high performance organic field-effect transistors

S. Shi, K. Shi, G. Yu, X. Li and H. Wang, RSC Adv., 2015, 5, 70319 DOI: 10.1039/C5RA14721B

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