Self-templating noncatalyzed synthesis of monolithic boron nitride nanowires

Abstract

Achieving economic orientation-controlled growth of monolithic nanowires remains a challenge. We report a simple and low-cost, endotaxial, self-templating, noncatalyzed synthesis of monolithic boron nitride semiconductor nanowires. The method uses orientated control of the nanowires prepared directly on Si substrates through plasma-enhanced chemical vapor deposition without a catalyst. The growth direction of the synthetic monolithic nanowires is controlled as a function of substrate crystal orientation. We measured the vertical electrical properties of the nanowires. Our method provides an alternative strategy to control monolithic nanowire growth in substrates, and may allow for large-scale, low-cost nanowire device manufacture.