Horizontal growth of MoS2 nanowires by chemical vapour deposition

Abstract

We describe a single step route for the synthesis of MoS₂ wires using a chemical vapour deposition (CVD) method. By tuning the CVD growth parameters, the horizontally oriented MoS₂ nanowires on SiO₂/Si substrate can be synthesized successfully. The MoS₂ nanowire has height of about 93 nm and width of about 402 nm with multilayer structure. Good local photoluminescence (PL) properties can be observed for these horizontal MoS₂ nanowires. The successful fabrication and prominent PL effect of the horizontal MoS₂ nanowires provide potential applications for the MoS₂-based in planar devices.