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Issue 69, 2015
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Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications

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Abstract

As potential candidates for high temperature piezoelectric materials, α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals grown by the flux method were structurally and thermally characterized. When compared to pure α-GeO2, room temperature polarized Raman spectra contained additional lines which have been assigned from density functional theory on a α-Ge0.833Si0.167O2 solid solution. The results highlight that Si–O–Ge bridges were involved. Moreover, a linear relationship between the wavenumber position of the main A1 Raman lines and the SiO2 substitution rate x was also observed. The analysis of the temperature dependence of unpolarized Raman signals of an α-Ge1−xSixO2 phase with x = 0.067 pointed out the high-thermal stability up to 1000 °C of the α-quartz-like structure related to the lack of a libration mode and to the absence of a softening mode with temperature.

Graphical abstract: Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications

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Publication details

The article was received on 01 May 2015, accepted on 17 Jun 2015 and first published on 17 Jun 2015


Article type: Paper
DOI: 10.1039/C5RA08051G
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Citation: RSC Adv., 2015,5, 55795-55800
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    Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications

    A. Lignie, P. Hermet, G. Fraysse and P. Armand, RSC Adv., 2015, 5, 55795
    DOI: 10.1039/C5RA08051G

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