Jump to main content
Jump to site search

Issue 48, 2015
Previous Article Next Article

Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting

Author affiliations

Abstract

We report the simple, photolithography-free, direct patterning of both solution-processed metal oxide semiconductors and dielectrics via selective surface wetting. This technique was directly applied to fabrication of low-voltage all-solution metal oxide thin-film transistors with minimal channel and gate leakage currents.

Graphical abstract: Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting

Back to tab navigation

Supplementary files

Publication details

The article was received on 14 Mar 2015, accepted on 17 Apr 2015 and first published on 27 Apr 2015


Article type: Communication
DOI: 10.1039/C5RA04515K
Author version
available:
Download author version (PDF)
Citation: RSC Adv., 2015,5, 38125-38129
  •   Request permissions

    Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting

    S. Sung, S. Park, S. Cha, W. Lee, C. Kim and M. Yoon, RSC Adv., 2015, 5, 38125
    DOI: 10.1039/C5RA04515K

Search articles by author

Spotlight

Advertisements