Novel field emission structure of CuO/Cu2O composite nanowires based on copper through silicon via technology

Abstract

A novel Cu through silicon via (TSV) fabrication process that does not require chemical mechanical polishing, temporary bonding, and de-bonding processes was developed. The Cu TSV has a square pattern with a side length of ∼80 μm and a depth of ∼280 μm. Uniform, high-density CuO/Cu₂O composite nanowires (NWs) were grown on the Cu TSV using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu₂O composite NWs were 4.7 V μm⁻¹ and ∼2902, respectively.