Issue 36, 2015

Solvent sensors based on amorphous ZnSnO thin-film transistors

Abstract

Amorphous zinc–tin oxide (a-ZTO) thin-film transistors (TFTs) were prepared using a combustion solution method. The properties of the a-ZTO films and a-ZTO TFTs were studied in detail. For applications, a-ZTO TFTs are used as solvent sensors. The a-ZTO TFTs exhibited strong sensitivity and selectivity in detecting solvents (e.g., cyclohexane, ethanol, and deionized water). The electron donors in the ZTO channels were determinated by the polarity of the solvent, which affects the location of the Femi level (Ef). Moreover, a feasible mechanism model related to the electron transfer channel (ETC) was proposed to explain the sensor behaviours. This model can be applied to most of the amorphous oxide TFT sensors. This work is expected to not only provide an insight into the fundamental understanding of the behaviours of amorphous oxide TFT biosensors, but also to offer a basic design guideline for device fabrication in this system.

Graphical abstract: Solvent sensors based on amorphous ZnSnO thin-film transistors

Article information

Article type
Communication
Submitted
24 Feb 2015
Accepted
13 Mar 2015
First published
13 Mar 2015

RSC Adv., 2015,5, 28242-28246

Author version available

Solvent sensors based on amorphous ZnSnO thin-film transistors

Q. J. Jiang, C. J. Wu, J. P. Cheng, X. D. Li, B. Lu, Z. Z. Ye and J. G. Lu, RSC Adv., 2015, 5, 28242 DOI: 10.1039/C5RA02125A

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