Issue 7, 2015
From the journal:

RSC Advances

Enhanced field emission properties based on In–In2O3 composite nanopagodas

Sin-Hui Wang,a   Shin Liu,a   Shoou-Jinn Chang,*a   Tsung-Ying Tsaia  and  Cheng-Liang Hsu*b  

* Corresponding authors

a Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
E-mail: changsj@mail.ncku.edu.tw

b Department of Electrical Engineering, National University of Tainan, Tainan 700, Taiwan, Republic of China
E-mail: clhsu@mail.nutn.edu.tw
Fax: +886-6-2602305
Tel: +886-6-2606123 ext. 7785

Abstract

In–In2O3 composite nanopagodas demonstrate excellent field emission properties with an enhanced kinetics factor (saturation ratio). The turn-on fields and β of the In–In2O3 nanopagodas were 2.0 V μm−1 and 3590. The indium of the In–In2O3 nanopagodas accumulates electrons and forms electron tunnels, which enhances the field emission properties.

Graphical abstract: Enhanced field emission properties based on In–In2O3 composite nanopagodas

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Article information

DOI
https://doi.org/10.1039/C4RA12593B
Article type
Communication
Submitted
17 Oct 2014
Accepted
01 Dec 2014
First published
03 Dec 2014

RSC Adv., 2015,5, 5192-5196

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Enhanced field emission properties based on In–In2O3 composite nanopagodas

S. Wang, S. Liu, S. Chang, T. Tsai and C. Hsu, RSC Adv., 2015, 5, 5192 DOI: 10.1039/C4RA12593B

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