Novel high-k polymers as dielectric layers for organic thin-film transistors

Abstract

In this paper, we report the design, synthesis, and dielectric properties of novel high-k and cross-linked polymer dielectric films used in low-threshold-voltage organic thin-film transistors (OTFTs). The novel polymer films are readily fabricated by spin coating followed by curing at 160 °C. These films exhibit excellent insulating properties, smooth surface, and high dielectric constants (7.2 and 6.8, respectively). The bottom-gate top-contact para-sexiphenyl (p-6P)/vanadyl-phthalocyanine (VOPc) OTFTs with these polymer films as the dielectric layer exhibit excellent performance in terms of threshold voltages (−3 and +3 V, respectively), charge carrier mobilities (0.8 and 0.5 cm² V⁻¹ s⁻¹, respectively), on/off current ratio >10⁴, and ultralow leakage.